Ugur Yahsi | Experimental methods | Best Researcher Award

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Prof. Ugur Yahsi | Experimental methods | Best Researcher Award

Head of the General Physics Department | Marmara University | Turkey

Prof. Dr. UÄźur YahĹźi is a Full Professor in the Physics Department at Marmara University, Istanbul, Turkey. With an academic background spanning Physics at institutions such as Istanbul University (BSc), University of Wisconsin (MSc), and Case Western Reserve University (PhD), he has made notable contributions to the scientific community in both research and education.

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Early Academic Pursuits đź“š

Prof. Dr. YahĹźi’s academic journey began with a BSc in Physics from Istanbul University in 1983. He pursued an MSc at the University of Wisconsin from 1987-1988, followed by a PhD at Case Western Reserve University, completing his studies in 1994. His early research laid the foundation for his future work in material science and applied physics.

Professional Endeavors đź’Ľ

Prof. Yahşi’s professional career has been extensive, with a continuous academic presence at Marmara University, where he has held positions from Assistant Professor to Full Professor since 1996. Additionally, he has served as a Visiting Scientist at the University of Missouri-Kansas City and contributed significantly to various administrative roles within the university, such as Senator and Director of the Institute of Pure and Applied Sciences.

Contributions and Research Focus 🔬

Prof. Dr. Yahşi’s research is at the forefront of material science, particularly in nanomaterials, macromolecular physics, and defect structures. His research spans across multiple topics, including vacancy structures, dendrimers, polymer-ion interactions, and nanometric defects in materials. He is a leading figure in applying positron annihilation spectroscopy and other advanced techniques to study the electronic properties of materials, advancing nanotechnology and material engineering.

Impact and Influence 🌍

Prof. Yahşi’s impact extends beyond his research, as he has shaped the academic environment at Marmara University. He has mentored numerous students through undergraduate, master’s, and doctoral research projects. His leadership roles have fostered growth in the Physics Department and research programs, contributing to collaborations with other institutions and research organizations globally.

Academic Cites đź“‘

Prof. Dr. YahĹźi has been extensively cited in scientific journals for his work on positron annihilation and material defect structures. His influence can be seen in the academic advancements in polymer science, nanotechnology, and material characterization techniques. The funding from projects such as TĂśBÄ°TAK and Marmara University underscores the significance of his work in advancing scientific discovery.

Research Skills 🔧

Prof. YahĹźi possesses a diverse set of research skills, including expertise in positron annihilation spectroscopy, experimental physics, and materials characterization. He is skilled in various computational tools such as Fortran, Mathematica, and MatLab, enabling him to model complex physical systems and conduct numerical simulations in support of his theoretical work.

Teaching Experience 🎓

Prof. Yahşi’s teaching spans over decades, with experience in courses ranging from Advanced Classical Mechanics to Computer Programming in Fortran. His commitment to student development is evident through his role in shaping curriculum and teaching courses in Technical English, Solid-State Physics, and Numerical Methods. He has also contributed significantly to the translation and localization of key texts in Physics, ensuring that students have access to high-quality educational resources.

Awards and Honors 🏆

Prof. YahĹźi has been the recipient of numerous fellowships and awards, such as the Turkish Educational Ministry Fellowship for his graduate studies. His work has earned research grants from prominent Turkish organizations like TĂśBÄ°TAK, demonstrating his recognized contributions to scientific progress. He continues to receive support for innovative projects, including the BÄ°DEB Mentorship Support Program and various Marmara University projects.

Legacy and Future Contributions 🌱

Prof. Dr. Uğur Yahşi’s legacy lies in his commitment to advancing physics education and research, particularly in material science and nanotechnology. His ongoing projects, such as the investigation of flash sintering in doped ZnO structures and polymer materials, are paving the way for future breakthroughs. With continued administrative roles and research leadership, Prof. Yahşi is poised to make lasting contributions to both academic knowledge and scientific innovation.

Publications Top Notes

Free volume impact on ionic conductivity of PVdF/GO/PVP solid polymer electrolytes via positron annihilation approach

  • Authors: M. YilmazoÄźlu, H. Okkay, U. Abacı, C. Tav, U. YahĹźi
    Journal: Radiation Physics and Chemistry, 2025

The Influence of Defects on the Structural, Optical, and Antibacterial Properties of Cr/Cu Co-Doped ZnO Nanoparticles

  • Authors: L. Arda, Z. Ra’ad, S. VeziroÄźlu, C. Tav, U. YahĹźi
    Journal: Journal of Molecular Structure, 2025

Correlation of proton conductivity and free volume in sulfonated polyether ether ketone electrolytes: A positron annihilation lifetime spectroscopy study

  • Authors: M. Lahmuni, M. YilmazoÄźlu, U. Abacı, C. Tav, U. YahĹźi
    Journal: Radiation Physics and Chemistry, 2025

A novel approach for the atomic scale characterization of Li-ion battery components probed by positron annihilation lifetime spectroscopy

  • Authors: R. Bakar, S. Koç, A. Yumak YahĹźi, C. Tav, U. YahĹźi
    Journal: Materials Research Bulletin, 2024

Free-volume analysis of the structural and dielectric properties of PMMA/TeO2 composites via positron annihilation lifetime spectroscopy

  • Authors: S. Kuzeci, E. Ă–zcan, A.U. Kaya, R. Bakar, C. Tav, U. YahĹźi, K. Esmer
    Journal: Journal of Alloys and Compounds, 2024

 

Yidong Zhang | Experimental methods | Best Researcher Award

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Dr. Yidong Zhang | Experimental methods | Best Researcher Award

Beijing University of Posts and Telecommunications | China

Yidong Zhang is an emerging scientist specializing in the growth of silicon-based III-V materials and their applications in the high-quality growth of GaAs heteroepitaxial layers. Holding a doctoral degree awarded at Beijing University of Posts and Telecommunications (BUPT) in 2024, he is currently a postdoctoral fellow at the same institution. His research focuses on cutting-edge quantum mechanics and material science, aiming to advance semiconductor technologies through innovative approaches in material growth.

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đź“š Early Academic Pursuits

Yidong Zhang’s academic journey began with a keen interest in the intersection of physics and material science, which led him to pursue advanced studies at BUPT. During his doctoral studies, Zhang delved into topics related to material fabrication and quantum mechanics, particularly focusing on heteroepitaxy and substrate preparation for GaAs growth on silicon wafers. His passion for cutting-edge research and technical innovation drove him to explore this challenging area of material science.

đź’Ľ Professional Endeavors

As a postdoctoral fellow at BUPT, Yidong Zhang is continuing his work in the field of semiconductor material growth. His professional endeavors are centered on addressing complex challenges in the heteroepitaxial growth of GaAs layers, with a particular emphasis on developing sub-nano streaky surfaces on Si (001) substrates. This innovative research has the potential to significantly improve the quality and performance of III-V semiconductor materials, which are vital for advanced electronics and optoelectronics.

🔬 Contributions and Research Focus

Zhang’s primary research focus is on the fabrication and application of high-quality GaAs heteroepitaxial layers, with an emphasis on substrate surface preparation. The work on the Si (001) substrate with sub-nano streaky surfaces is crucial as it enables better material integration and growth precision, leading to enhanced performance in semiconductor devices. His contributions in the field of silicon-based III-V material growth are poised to advance semiconductor technology, especially in areas such as high-speed electronics and optical communications.

🌍 Impact and Influence

Yidong Zhang’s research is positioned to make a significant impact in the semiconductor industry. His innovative work in substrate preparation and material growth techniques has the potential to influence high-performance electronics, solar cells, LEDs, and laser technologies. Zhang’s approach is likely to transform industry standards by offering a more cost-effective and precise method for growing high-quality semiconductor materials. His work could ultimately enable the development of next-generation devices with enhanced efficiency and performance.

đź“‘ Academic Cites

While Yidong Zhang’s publication record is still emerging, his research has been well-received in the academic community, with growing interest in his work on Si (001) substrate preparation and GaAs heteroepitaxy. As his body of work expands, the citations of his publications are expected to increase, further cementing his position as a leading researcher in the field of material science and semiconductor technology.

🛠️ Research Skills

Dr. Yidong Zhang demonstrates a strong command of several research skills, including experimental design, material characterization, and quantum mechanical simulations. His expertise in substrate preparation techniques, coupled with his knowledge of semiconductor growth processes, equips him with the necessary tools to tackle complex challenges in the field of heteroepitaxy. He has a high level of proficiency in nano-scale fabrication and materials analysis, making him a valuable asset in any research team focused on advanced material science.

👨‍🏫 Teaching Experience

As a postdoctoral fellow, Zhang has had opportunities to mentor graduate students and research assistants at BUPT. His role involves guiding students through complex experimental setups, helping them develop critical research skills, and encouraging a hands-on approach to material science. His commitment to education and knowledge sharing ensures the continued growth of the next generation of researchers in quantum mechanics and material fabrication.

🏅 Awards and Honors

Yidong Zhang’s early academic career has already been marked by several academic achievements, including the award of a Doctoral degree in 2024. While he is at the beginning of his postdoctoral journey, Zhang is a strong contender for recognition in the research community, particularly through awards like the Best Researcher Award. His work is likely to attract further accolades as it continues to push the boundaries of material science and semiconductor technology.

🌱 Legacy and Future Contributions

As Yidong Zhang progresses in his career, his legacy in the field of semiconductor research will likely be defined by his contributions to high-quality material growth techniques and the advancement of silicon-based III-V heteroepitaxy. His future contributions could lead to game-changing advancements in electronics and optoelectronics, as his work has the potential to revolutionize semiconductor integration. Looking ahead, Zhang’s research will continue to influence both academia and industry, laying the groundwork for next-generation technologies.

Publications Top Notes

The Si (001) substrate with sub-nano streaky surface: Preparation and its application to high-quality growth of GaAs heteroepitaxial-layer

  • Authors: Yidong Zhang, Jian Li, Xiaomin Ren, Chuanchuan Li, Xin Wei
    Journal: Applied Surface Science
    Year: 2024

InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers

  • Authors: Yongli Wang, Bojie Ma, Jian Li, Xin Wei
    Journal: Optics Express
    Year: January 2023

Rapid and facile characterization of dislocations in cross-sectional GaAs/Si films using electron channeling contrast imaging

  • Authors: Chen Jiang, Hao Liu, Jian Li, Qi Wang
    Journal: Conference Paper
    Year: January 2023

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

  • Authors: Chen Jiang, Hao Liu, Jun Wang, Yongqing Huang
    Journal: Applied Physics Letters
    Year: August 2022