Shanghai Jiao Tong University | China
Dr. Y. Sun earned his Ph.D. in Electronic and Computer Engineering from The Hong Kong University of Science and Technology (2015) and his B.S. in Microelectronics from Shanghai Jiao Tong University (2009). He is currently an Associate Professor of Electrical Engineering at Shanghai Jiao Tong University, where he previously served as Assistant Professor. His research focuses on in-memory computing, energy-efficient digital integrated circuits, neuromorphic computing, and AI hardware acceleration. He has published extensively in top-tier journals such as IEEE TCAS-I, TCAD, JSSC, TED, and TGRS, and at leading conferences including DAC, ICCAD, DATE, ISSCC, and ISCAS, with several works nominated for or receiving Best Paper Awards. Notably, he received the First Place Best Paper Award at the IEEE International Conference on Microelectronics (2014) and Best Paper Award nominations at DATE (2020) and ICTA (2023). His impactful contributions span monolithic 3D memory, ReRAM-based neural network acceleration, metastability mitigation in SoCs, and computing-in-memory architectures, demonstrating strong expertise at the intersection of circuit design, architectures, and AI acceleration.
Profile: Scopus | Google Scholar | ORCID
Featured Publications
"Robust Monolithic 3D Carbon-Based Computing-in-SRAM with Variation-Aware Bit-Wise Data-Mapping for High-Performance and Integration Density"
"HyCTor: A Hybrid CNN-Transformer Network Accelerator With Flexible Weight/Output Stationary Dataflow and Multicore Extension"
"Hop-CIM: An all-digital two-level approximate SRAM-CIM macro for high energy-efficient HNN acceleration with data-aware early exit and column-wise partial-sum reuse"
"A Metastability Risk Prediction and Mitigation Technique for Clock-Domain Crossing with Single-Stage Synchronizer in Near-Threshold-Voltage Millivoltage/ Frequency-Domain Network-on-Chip"
"Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) with Ferroelectric Memcapacitor"