Ramadevi Suguru Pathinti | Experimental methods | Best Researcher Award

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Mrs. Ramadevi Suguru Pathinti | Experimental methods | Best Researcher Award

Research Scholar at National Institute of Technology Warangal | India

Ramadevi Suguru Pathinti is currently pursuing her Ph.D. in Physics at the National Institute of Technology, Warangal, India, specializing in Materials Science with a focus on soft matter research. Her academic journey spans from her M.Sc. in Physics to her ongoing doctoral studies. Ramadevi has made significant contributions in the field of nanomaterials and smart materials, particularly in integrating liquid crystals with metal oxides for the development of advanced gas sensors and UV photodetectors.

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Early Academic Pursuits 🎓

Ramadevi’s academic journey began at Rayalaseema University, Kurnool, India, where she pursued her M.Sc. in Physics with a specialization in Electronics, securing a CGPA of 9.1/10. She also holds a B.Sc. in Mathematics, Physics, and Computer Science. Her strong academic foundation laid the groundwork for her pioneering research in Materials Science during her doctoral studies at NIT, Warangal.

Professional Endeavors 💼

In her professional journey, Ramadevi has excelled in scientific research within both academic and industrial contexts. She has contributed to the development of thin film devices for smart window technologies, gas sensors, and photodetectors. Her Ph.D. research focuses on integrating liquid crystal-functionalized metal oxides to enhance the optical properties and responsivity of sensors, enabling advancements in environmental sensing and optoelectronic devices.

Contributions and Research Focus 🔬

Ramadevi’s research is centered on the synthesis of nanomaterials and their integration into innovative smart materials. She has worked extensively on fabricating gas sensors and UV photodetectors using liquid crystal-metal oxide hybrids. Notably, her work on smart windows is groundbreaking, where she has discovered novel optical switching behaviors and light modulation techniques, paving the way for energy-saving technologies. Furthermore, her synthesis methods like sol-gel and hydrothermal techniques have contributed to enhanced material properties for sensing applications.

Impact and Influence 🌍

Her research has already made a considerable impact in the fields of environmental sensing and smart material development, particularly in the energy-efficient technologies sector. Ramadevi’s work has the potential to revolutionize how we detect gases, modulate light, and develop self-powered sensors, with applications ranging from smart windows to sensitive environmental monitoring systems. Through her research, she aims to bring forth sustainable technologies that are adaptable to changing global needs.

Academic Cites 📚

Ramadevi has authored several impactful publications in top-tier peer-reviewed journals, contributing to the fields of materials science and optoelectronics. Her articles in journals like the Journal of Molecular Liquids, Journal of Alloys and Compounds, and Advanced Material Technology have contributed to the scientific community’s understanding of the integration of nanomaterials and liquid crystals for innovative devices. She has also presented her research at national and international conferences, further strengthening her academic profile.

Research Skills 🛠

Ramadevi has developed extensive technical expertise in nanomaterial synthesis using methods like sol-gel and hydrothermal techniques. She is proficient in device fabrication, particularly thin film devices for gas sensing and UV photodetector applications. Additionally, she has hands-on experience with advanced research instruments, including optical polarizing microscopes, fluorescence microscopes, and spin coating systems, which enhance her ability to conduct high-quality research and device development.

Teaching Experience 📚

In addition to her research, Ramadevi has taught practical sessions for both M.Sc. (Tech) Physics and B.Tech students. She has handled laboratory work, where she imparted valuable knowledge on experimental techniques and device characterization to budding scientists. This experience has helped her develop strong interpersonal and communication skills, which are essential for future academic and industrial collaborations.

Awards and Honors 🏆

Ramadevi’s excellence has been acknowledged through the Joint CSIR-UGC National Eligibility Test (NET) for Junior Research Fellowship (JRF) in 2017, where she secured an impressive All India Rank of 57. This achievement is a testament to her academic aptitude and research potential.

Legacy and Future Contributions 🌟

Looking forward, Ramadevi aims to make lasting contributions to the field of materials science and nanotechnology. Her research is poised to drive innovations in smart materials, sustainable technologies, and energy-efficient devices, with far-reaching implications for environmental sensing, smart window technologies, and optoelectronics. With her interdisciplinary approach and collaborative nature, she is well-positioned to make significant advancements in both academic and industrial research.

Publications Top Notes

Label-free detection of Aβ-42: a liquid crystal droplet approach for Alzheimer’s disease diagnosis

  • Authors: Saumya Ranjan Pradhan, Ramadevi Suguru Pathinti, Ramesh Kandimalla, Krishnakanth Chithari, Madhava Rao Veeramalla N., Jayalakshmi Vallamkondu
    Journal: RSC Advances
    Year: 2024

Enhanced ethanol gas detection using TiO2 nanorods dispersed in cholesteric liquid crystal: Synthesis, characterization, and sensing performance

  • Authors: Ramadevi Suguru Pathinti, Sunil Gavaskar Dasari, Buchaiah Gollapelli, Sreedevi Gogula, Ramana Reddy M.V., Jayalakshmi Vallamkondu
    Journal: Journal of Alloys and Compounds
    Year: 2024

Enhanced security through dye-doped cholesteric liquid crystal shells for anti-counterfeiting

  • Authors: Chris Mathew, Ramadevi Suguru Pathinti, Saumya Ranjan Pradhan, Buchaiah Gollapelli, Krishnakanth Chithari, Mrittika Ghosh, Ashok Nandam, Jayalakshmi Vallamkondu
    Journal: Optical Materials
    Year: 2024

ZnO nanoparticles dispersed cholesteric liquid crystal based smart window for energy saving application

  • Authors: Ramadevi Suguru Pathinti, Arun Kumar Tatipamula, Jayalakshmi Vallamkondu
    Journal: Journal of Alloys and Compounds
    Year: 2023

Energy saving, transparency changing thermochromism in dye-doped cholesteric liquid crystals for smart windows

  • Authors: Ramadevi Suguru Pathinti, Buchaiah Gollapelli, Saumya Ranjan Pradhan, Jayalakshmi Vallamkondu
    Journal: Journal of Photochemistry and Photobiology A: Chemistry
    Year: 2023

 

Jianwen Yang | Experimental methods | Best Researcher Award

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Assoc. Prof. Dr. Jianwen Yang | Experimental methods | Best Researcher Award

Associate Professor, Master’s Supervisor, Deputy Head of the Physics Department at Shanghai Normal University | China

Dr. Jianwen Yang is an Associate Professor at Shanghai Normal University, holding a Ph.D. in Physical Electronics from Fudan University. His primary research focus lies in oxide semiconductors and information display technologies. With significant experience in addressing instability issues in industrial devices, he has contributed to analyzing the performance of a-IGZO TFTs in companies like TSMC and AUOtronics. His innovative work in n-type tin oxide-based TFTs and indium-free doped tin oxide-based TFTs has led to breakthroughs in the field, providing devices with superior electrical characteristics.

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Early Academic Pursuits 📚

Dr. Yang’s academic journey began with a solid foundation in Physical Electronics, completing his Ph.D. at Fudan University. During his early studies, he developed a keen interest in the intersection of material science and electronics, which led him to explore oxide thin-film transistors (TFTs) as a promising avenue for future advancements. His focus on new materials and material simplification laid the groundwork for his later innovations in tin oxide-based TFTs, a critical area in the development of modern information display technologies.

Professional Endeavors 💼

Dr. Yang’s professional career has been marked by collaborations with prominent industry leaders like TSMC and AUOtronics, where he contributed to solving the instability challenges in industrialized a-IGZO TFTs. These efforts have provided valuable insights into the performance optimization of thin-film transistors, further driving the industry forward. His participation in national projects, such as those funded by the National Natural Science Foundation of China (NSFC), also highlights his commitment to advancing the field through both academic research and real-world applications.

Contributions and Research Focus 🔬

Dr. Yang’s pioneering research in n-type tin oxide-based TFTs led to the introduction of novel indium-free doped tin oxide materials like SnWO, SnSiO, and SnNiO, which have all exhibited superior electrical characteristics. His work on comparing top/bottom-gate a-IGZO TFTs under varying stress conditions provided valuable insights into threshold voltage shifts and carrier concentration variations, significantly impacting the design and stability of oxide semiconductors in practical applications. He has consistently pushed the boundaries of material research, particularly in the flexible electronics sector.

Impact and Influence 🌍

Dr. Yang’s groundbreaking research has had a profound impact on the development of oxide semiconductor devices, particularly in TFT technology. His innovative approaches have been cited in multiple review articles, and his work continues to influence both academic researchers and industry practitioners. His research on indium-free tin oxide-based TFTs has not only enriched academic literature but also paved the way for more sustainable and efficient solutions in the information display industry. The superior electrical characteristics of his materials have positioned them as viable alternatives to traditional indium-based materials, which are costly and scarce.

Academic Cites 📈

Dr. Yang has published over 38 journals in top-tier scientific databases, including SCI and Scopus, with his work receiving 11 citations. His innovative research has been referenced in numerous review articles, further establishing him as a thought leader in his field. These citations reflect the widespread recognition of his research’s significance, and his publications continue to influence the academic community’s understanding of oxide semiconductors and TFT stability.

Research Skills 🛠️

Dr. Yang’s research skills span a wide range of disciplines, from material science to electronic device engineering. His expertise in thin-film transistor design, instability analysis, and new material development has allowed him to push the envelope in semiconductor research. He is particularly skilled in analyzing the electrical performance of TFTs under various stress conditions, demonstrating an acute understanding of the intricate relationship between material properties and device functionality. Additionally, his work in flexible electronics is a testament to his ability to innovate in emerging areas.

Teaching Experience 👩‍🏫

As an Associate Professor at Shanghai Normal University, Dr. Yang has been involved in educating and mentoring the next generation of scientists and engineers. He brings his extensive research experience into the classroom, enriching students’ learning experiences. Dr. Yang’s teaching focuses on semiconductor physics, material science, and electronics. His dedication to student development is evident in his guidance of graduate students and the collaborative environment he fosters for academic exploration.

Awards and Honors 🏅

Dr. Yang’s contributions have been recognized by several prestigious national research organizations, including the National Natural Science Foundation of China. His research projects, such as the Study on the Instability of Flexible Amorphous SnSiO Thin Film Transistors, have earned him respect in the academic community and have helped elevate Shanghai Normal University‘s status in the field of electronic materials research.

Legacy and Future Contributions 🔮

Dr. Yang’s research legacy lies in his innovative contributions to oxide semiconductor technology and his dedication to finding sustainable solutions for the electronics industry. His ongoing research projects, including his work on the 345GHz Submillimeter Wave Sideband Separation Receiver for LCT Telescope, show his commitment to exploring cutting-edge technologies. Moving forward, Dr. Yang plans to continue refining indium-free tin oxide-based TFTs and explore their industrial scalability. His work has the potential to impact a variety of industries, from flexible displays to advanced sensors, shaping the future of electronic materials.

Publications Top Notes

Exploring soil-buoyancy interactions: experimental designs and educational implications for enhancing students’ scientific inquiry skills

  • Authors: Zijian Gu, Jianwen Yang
    Journal: Physics Education
    Year: 2025

Fast-response IWO/Si heterojunction photodetectors

  • Authors: Xiaochuang Dai, Jianwen Yang, Huishan Wang, Yunxi Luo, Jinying Zeng, Wangzhou Shi, Feng Liu
    Journal: Journal of Physics D: Applied Physics
    Year: 2025

Enhancement of electrical characteristics of SnGaO thin-film transistors via argon and oxygen plasma treatment

  • Authors: Yinli Lu, Xiaochuang Dai, Jianwen Yang, Ying Liu, Duo Cao, Fangting Lin, Feng Liu
    Journal: Vacuum
    Year: 2024

Preparation of chalcogenide perovskite SrHfS3 and luminescent SrHfS3:Eu2+ thin films

  • Authors: Yanbing Han, Jiao Fang, Yurun Liang, Han Gao, Jianwen Yang, Xu Chen, Yifang Yuan, Zhifeng Shi
    Journal: Applied Physics Letters
    Year: 2024

Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination

  • Authors: Dong Lin, Wan-Ching Su, Ting-Chang Chang, Hong-Chih Chen, Yu-Fa Tu, Kuan-Ju Zhou, Yang-Hao Hung, Jianwen Yang, I-Nien Lu, Tsung-Ming Tsai et al.
    Journal: IEEE Transactions on Electron Devices
    Year: 2021

 

 

Yidong Zhang | Experimental methods | Best Researcher Award

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Dr. Yidong Zhang | Experimental methods | Best Researcher Award

Beijing University of Posts and Telecommunications | China

Yidong Zhang is an emerging scientist specializing in the growth of silicon-based III-V materials and their applications in the high-quality growth of GaAs heteroepitaxial layers. Holding a doctoral degree awarded at Beijing University of Posts and Telecommunications (BUPT) in 2024, he is currently a postdoctoral fellow at the same institution. His research focuses on cutting-edge quantum mechanics and material science, aiming to advance semiconductor technologies through innovative approaches in material growth.

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📚 Early Academic Pursuits

Yidong Zhang’s academic journey began with a keen interest in the intersection of physics and material science, which led him to pursue advanced studies at BUPT. During his doctoral studies, Zhang delved into topics related to material fabrication and quantum mechanics, particularly focusing on heteroepitaxy and substrate preparation for GaAs growth on silicon wafers. His passion for cutting-edge research and technical innovation drove him to explore this challenging area of material science.

💼 Professional Endeavors

As a postdoctoral fellow at BUPT, Yidong Zhang is continuing his work in the field of semiconductor material growth. His professional endeavors are centered on addressing complex challenges in the heteroepitaxial growth of GaAs layers, with a particular emphasis on developing sub-nano streaky surfaces on Si (001) substrates. This innovative research has the potential to significantly improve the quality and performance of III-V semiconductor materials, which are vital for advanced electronics and optoelectronics.

🔬 Contributions and Research Focus

Zhang’s primary research focus is on the fabrication and application of high-quality GaAs heteroepitaxial layers, with an emphasis on substrate surface preparation. The work on the Si (001) substrate with sub-nano streaky surfaces is crucial as it enables better material integration and growth precision, leading to enhanced performance in semiconductor devices. His contributions in the field of silicon-based III-V material growth are poised to advance semiconductor technology, especially in areas such as high-speed electronics and optical communications.

🌍 Impact and Influence

Yidong Zhang’s research is positioned to make a significant impact in the semiconductor industry. His innovative work in substrate preparation and material growth techniques has the potential to influence high-performance electronics, solar cells, LEDs, and laser technologies. Zhang’s approach is likely to transform industry standards by offering a more cost-effective and precise method for growing high-quality semiconductor materials. His work could ultimately enable the development of next-generation devices with enhanced efficiency and performance.

📑 Academic Cites

While Yidong Zhang’s publication record is still emerging, his research has been well-received in the academic community, with growing interest in his work on Si (001) substrate preparation and GaAs heteroepitaxy. As his body of work expands, the citations of his publications are expected to increase, further cementing his position as a leading researcher in the field of material science and semiconductor technology.

🛠️ Research Skills

Dr. Yidong Zhang demonstrates a strong command of several research skills, including experimental design, material characterization, and quantum mechanical simulations. His expertise in substrate preparation techniques, coupled with his knowledge of semiconductor growth processes, equips him with the necessary tools to tackle complex challenges in the field of heteroepitaxy. He has a high level of proficiency in nano-scale fabrication and materials analysis, making him a valuable asset in any research team focused on advanced material science.

👨‍🏫 Teaching Experience

As a postdoctoral fellow, Zhang has had opportunities to mentor graduate students and research assistants at BUPT. His role involves guiding students through complex experimental setups, helping them develop critical research skills, and encouraging a hands-on approach to material science. His commitment to education and knowledge sharing ensures the continued growth of the next generation of researchers in quantum mechanics and material fabrication.

🏅 Awards and Honors

Yidong Zhang’s early academic career has already been marked by several academic achievements, including the award of a Doctoral degree in 2024. While he is at the beginning of his postdoctoral journey, Zhang is a strong contender for recognition in the research community, particularly through awards like the Best Researcher Award. His work is likely to attract further accolades as it continues to push the boundaries of material science and semiconductor technology.

🌱 Legacy and Future Contributions

As Yidong Zhang progresses in his career, his legacy in the field of semiconductor research will likely be defined by his contributions to high-quality material growth techniques and the advancement of silicon-based III-V heteroepitaxy. His future contributions could lead to game-changing advancements in electronics and optoelectronics, as his work has the potential to revolutionize semiconductor integration. Looking ahead, Zhang’s research will continue to influence both academia and industry, laying the groundwork for next-generation technologies.

Publications Top Notes

The Si (001) substrate with sub-nano streaky surface: Preparation and its application to high-quality growth of GaAs heteroepitaxial-layer

  • Authors: Yidong Zhang, Jian Li, Xiaomin Ren, Chuanchuan Li, Xin Wei
    Journal: Applied Surface Science
    Year: 2024

InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers

  • Authors: Yongli Wang, Bojie Ma, Jian Li, Xin Wei
    Journal: Optics Express
    Year: January 2023

Rapid and facile characterization of dislocations in cross-sectional GaAs/Si films using electron channeling contrast imaging

  • Authors: Chen Jiang, Hao Liu, Jian Li, Qi Wang
    Journal: Conference Paper
    Year: January 2023

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

  • Authors: Chen Jiang, Hao Liu, Jun Wang, Yongqing Huang
    Journal: Applied Physics Letters
    Year: August 2022