Associate Professor, Master’s Supervisor, Deputy Head of the Physics Department at Shanghai Normal University | China
Dr. Jianwen Yang is an Associate Professor at Shanghai Normal University, holding a Ph.D. in Physical Electronics from Fudan University. His primary research focus lies in oxide semiconductors and information display technologies. With significant experience in addressing instability issues in industrial devices, he has contributed to analyzing the performance of a-IGZO TFTs in companies like TSMC and AUOtronics. His innovative work in n-type tin oxide-based TFTs and indium-free doped tin oxide-based TFTs has led to breakthroughs in the field, providing devices with superior electrical characteristics.
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Early Academic Pursuits 📚
Dr. Yang’s academic journey began with a solid foundation in Physical Electronics, completing his Ph.D. at Fudan University. During his early studies, he developed a keen interest in the intersection of material science and electronics, which led him to explore oxide thin-film transistors (TFTs) as a promising avenue for future advancements. His focus on new materials and material simplification laid the groundwork for his later innovations in tin oxide-based TFTs, a critical area in the development of modern information display technologies.
Professional Endeavors 💼
Dr. Yang’s professional career has been marked by collaborations with prominent industry leaders like TSMC and AUOtronics, where he contributed to solving the instability challenges in industrialized a-IGZO TFTs. These efforts have provided valuable insights into the performance optimization of thin-film transistors, further driving the industry forward. His participation in national projects, such as those funded by the National Natural Science Foundation of China (NSFC), also highlights his commitment to advancing the field through both academic research and real-world applications.
Contributions and Research Focus 🔬
Dr. Yang’s pioneering research in n-type tin oxide-based TFTs led to the introduction of novel indium-free doped tin oxide materials like SnWO, SnSiO, and SnNiO, which have all exhibited superior electrical characteristics. His work on comparing top/bottom-gate a-IGZO TFTs under varying stress conditions provided valuable insights into threshold voltage shifts and carrier concentration variations, significantly impacting the design and stability of oxide semiconductors in practical applications. He has consistently pushed the boundaries of material research, particularly in the flexible electronics sector.
Impact and Influence 🌍
Dr. Yang’s groundbreaking research has had a profound impact on the development of oxide semiconductor devices, particularly in TFT technology. His innovative approaches have been cited in multiple review articles, and his work continues to influence both academic researchers and industry practitioners. His research on indium-free tin oxide-based TFTs has not only enriched academic literature but also paved the way for more sustainable and efficient solutions in the information display industry. The superior electrical characteristics of his materials have positioned them as viable alternatives to traditional indium-based materials, which are costly and scarce.
Academic Cites 📈
Dr. Yang has published over 38 journals in top-tier scientific databases, including SCI and Scopus, with his work receiving 11 citations. His innovative research has been referenced in numerous review articles, further establishing him as a thought leader in his field. These citations reflect the widespread recognition of his research’s significance, and his publications continue to influence the academic community’s understanding of oxide semiconductors and TFT stability.
Research Skills 🛠️
Dr. Yang’s research skills span a wide range of disciplines, from material science to electronic device engineering. His expertise in thin-film transistor design, instability analysis, and new material development has allowed him to push the envelope in semiconductor research. He is particularly skilled in analyzing the electrical performance of TFTs under various stress conditions, demonstrating an acute understanding of the intricate relationship between material properties and device functionality. Additionally, his work in flexible electronics is a testament to his ability to innovate in emerging areas.
Teaching Experience 👩🏫
As an Associate Professor at Shanghai Normal University, Dr. Yang has been involved in educating and mentoring the next generation of scientists and engineers. He brings his extensive research experience into the classroom, enriching students’ learning experiences. Dr. Yang’s teaching focuses on semiconductor physics, material science, and electronics. His dedication to student development is evident in his guidance of graduate students and the collaborative environment he fosters for academic exploration.
Awards and Honors 🏅
Dr. Yang’s contributions have been recognized by several prestigious national research organizations, including the National Natural Science Foundation of China. His research projects, such as the Study on the Instability of Flexible Amorphous SnSiO Thin Film Transistors, have earned him respect in the academic community and have helped elevate Shanghai Normal University‘s status in the field of electronic materials research.
Legacy and Future Contributions 🔮
Dr. Yang’s research legacy lies in his innovative contributions to oxide semiconductor technology and his dedication to finding sustainable solutions for the electronics industry. His ongoing research projects, including his work on the 345GHz Submillimeter Wave Sideband Separation Receiver for LCT Telescope, show his commitment to exploring cutting-edge technologies. Moving forward, Dr. Yang plans to continue refining indium-free tin oxide-based TFTs and explore their industrial scalability. His work has the potential to impact a variety of industries, from flexible displays to advanced sensors, shaping the future of electronic materials.
Publications Top Notes
Exploring soil-buoyancy interactions: experimental designs and educational implications for enhancing students’ scientific inquiry skills
Fast-response IWO/Si heterojunction photodetectors
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Authors: Xiaochuang Dai, Jianwen Yang, Huishan Wang, Yunxi Luo, Jinying Zeng, Wangzhou Shi, Feng Liu
Journal: Journal of Physics D: Applied Physics
Year: 2025
Enhancement of electrical characteristics of SnGaO thin-film transistors via argon and oxygen plasma treatment
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Authors: Yinli Lu, Xiaochuang Dai, Jianwen Yang, Ying Liu, Duo Cao, Fangting Lin, Feng Liu
Journal: Vacuum
Year: 2024
Preparation of chalcogenide perovskite SrHfS3 and luminescent SrHfS3:Eu2+ thin films
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Authors: Yanbing Han, Jiao Fang, Yurun Liang, Han Gao, Jianwen Yang, Xu Chen, Yifang Yuan, Zhifeng Shi
Journal: Applied Physics Letters
Year: 2024
Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination
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Authors: Dong Lin, Wan-Ching Su, Ting-Chang Chang, Hong-Chih Chen, Yu-Fa Tu, Kuan-Ju Zhou, Yang-Hao Hung, Jianwen Yang, I-Nien Lu, Tsung-Ming Tsai et al.
Journal: IEEE Transactions on Electron Devices
Year: 2021