PHD at the University of Tunis El Manar, Tunisia
Hédi Fitouri received the Ph.D. degree in physics from the University of Tunis El Manar, Tunisia, in 2009 and the D.Sc. (Habilitation) degree in physics from the University of Monastir in 2016. He has a Professor with the Faculty of Sciences of Monastir and leads the III-As materials for telecommunications and energy Team, a Research Group part of the Research Laboratory for Hetero-Epitaxy and Applications, 5019 Monastir, Tunisia. His research interests include atmospheric pressure metalorganic vapor phase epitaxy of novel optoelectronic III-V compounds, development of low dimensional III-V semiconductor structures, and high-efficiency solar cells.
Professional Profiles
Education
Ph.D. in Physics (2009) University of Tunis El Manar, Tunisia D.Sc. (Habilitation) in Physics (2016) University of Monastir, Tunisia
Professional Experience
Professor Faculty of Sciences of Monastir, Tunisia
Research Interests
Atmospheric pressure metalorganic vapor phase epitaxy of novel optoelectronic III-V compounds Development of low-dimensional III-V semiconductor structures High-efficiency solar cells
Research Focus
Hédi Fitouri’s research focuses on the metalorganic vapor phase epitaxy (MOVPE) of III-V semiconductor alloys. His work includes optimizing the growth conditions for GaAsBi alloys, studying their structural, optical, and magnetic properties, and exploring their applications in optoelectronics and solar cells. Fitouri’s studies encompass photoreflectance, photoluminescence, and X-ray diffraction techniques to investigate localization effects, annealing effects, and growth mechanisms. He is also involved in researching bismuth-catalyzed growth of nanowires and nanostructures, contributing significantly to the fields of semiconductor materials, nanoengineering, and sustainable energy technologies.
Publications
- MOVPE growth and characterization of GaAs/GaAsBi/GaAs pin structure, Publication date: 2024.
- Thermal annealing effects on the physical properties of GaAsBi/GaAs/GaAs:Si structure, Publication date: 2023.
- Thermal processes contributions to the temperature dependence of the energy gap in dilute bismuth III-V alloys, Publication date: 2022.
- Influence of the Substrate Material on the Structure and Morphological Properties of Bi Films, Publication date: 2022.
- A systematic methodology for the analysis of multicomponent photoreflectance spectra applied to GaAsBi/GaAs structure, Publication date: 2020.
- In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy, Publication date: 2019.
- Temperature dependence on the morphological evolution of dilute InAsBi/GaAs nanostructures grown by metalorganic vapor phase epitaxy, Publication date: 2017.
- MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance, Publication date: 2017.
- High‐resolution X‐ray diffraction of III–V semiconductor thin films, Publication date: 2017.
- Photothermal deflection investigation of thermally oxidized mesoporous silicon, Publication date: 2016.
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