Mr. ZEKAI ZHANG, semiconducting material, Best Researcher Award
PHD at the University of Western Australia, Australia
Zekai Zhang is a Ph.D. candidate in Microelectronics Engineering at the University of Western Australia, specializing in Molecular Beam Epitaxy of II-VI Infrared Semiconducting Material. With a post-graduate diploma and B.E. in Electrical Engineering from the University of Manchester, his research focuses on fabricating high-performance Mid-wavelength and Long-wavelength infrared detectors. Zekai’s expertise spans Molecular Beam Epitaxy growth, semiconducting material characterization, and the establishment of infrared imaging systems. Currently based in Perth, he is dedicated to advancing the field of infrared technology, contributing significantly to the research and development of innovative infrared materials and devices.
Professional Profiles:
Educationš
Ph.D. in Microelectronics Engineering University of Western Australia, Perth Nov 2017 ā Present Post-graduate Diploma in Electrical Engineering University of Manchester, Manchester Oct 2015 ā July 2016 B.E in Electronics and Electrical Engineering University of Manchester, Manchester Sept 2013 ā June 2015
Research Fields:
Molecular Beam Epitaxy of II-VI Infrared Semiconducting Material Currently pursuing Ph.D. at the University of Western Australia, focusing on the fabrication of high-performance Mid-wavelength and Long-wavelength infrared detectors and correlated infrared imaging systems.
Research Focus:
Zekai Zhang’s research predominantly centers on the elasto-plastic properties of semiconducting HgāāāCdāSe, employing nanoindentation techniques. As evidenced by multiple publications in reputable journals such as Infrared Physics and Technology, Journal of Applied Physics, and Nano Research, his work delves into diverse aspects of semiconductor material science. Zhang’s expertise extends to the molecular beam epitaxy of II-VI infrared semiconductors, specifically HgCdTe and HgCdSe, with a keen focus on their structural and nanoindentation properties. His contributions span from flexible infrared optoelectronics to defect engineering in CdTe buffer layers, showcasing a comprehensive exploration of advanced materials and their applications.
Publications (TOP NOTES)
A theoretical and experimental study of the energy bandgap in MBE-grown Hg1-xCdxSe, Cited by 3, Publication date: 2020.
Hysteresis Effect in Two-Dimensional Bi2Te3 Nanoplate Field-Effect Transistors, Cited by 7, Publication date: 2020.
SnSe Nanoplates for Photodetectors with a High Signal/Noise Ratio, Cited by 7, Publication date: 2021.
Large area van der Waals epitaxy of IIāVI CdSe thin films for flexible optoelectronics and full-color imaging, Cited by 14, Publication date: 2022.
Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates, Cited by 8, Publication date: 2022.