Institute of Physics, Chinese Academy of Sciences | China
Dr. Feng Jiafeng is an Associate Professor at the Institute of Physics, Chinese Academy of Sciences. He received his Doctoral degree in 2007 from the Institute of Physics, Chinese Academy of Sciences. After completing postdoctoral research at Trinity College Dublin and SpinTec, France, Dr. Feng became a Position-Professor at the University of Chinese Academy of Sciences in 2016. His expertise lies in spintronics with a focus on magnetic sensors, magnetic random access memory, and spin torque nano-oscillators. He has published over 100 SCI papers and holds more than 10 patents.
Profile
🎓Early Academic Pursuits
Dr. Feng’s academic journey began at Anhui University, where he earned his Bachelor’s degree in Physics in 2002. His keen interest in spintronics led him to the Institute of Physics, Chinese Academy of Sciences, where he obtained his PhD in 2007. His doctoral research laid the foundation for his expertise in magnetic materials and spin transport phenomena. Dr. Feng’s early academic work focused on the theoretical and experimental study of magnetic thin films and nanostructures, which became a cornerstone for his subsequent career in spintronic devices.
🌍 Professional Endeavors
Dr. Feng’s professional journey spans multiple continents, highlighting his global contributions to materials physics. After completing his Ph.D., he conducted postdoctoral research at Trinity College Dublin (2007–2011) and SpinTec, Grenoble (2011–2013), focusing on magnetic sensors and spin torque nano-oscillators. In 2013, he joined the Institute of Physics, CAS, as an Associate Professor and later became a Position-Professor at the University of CAS in 2016. His professional roles reflect his leadership in spintronic device innovation, with significant impact in academic and applied physics.
⚙️ Contributions and Research Focus
Dr. Feng specializes in spintronics, emphasizing the development of magnetic sensors, magnetic random access memory (MRAM), and spin torque nano-oscillators. His work has resulted in more than 100 publications in prestigious journals like Advanced Materials and Nature Communications. He has also secured over 10 patents, showcasing his ability to translate theoretical research into practical applications. By advancing quantum well oscillations and spin Hall conductivity, Dr. Feng has positioned himself as a pioneer in magnetic device engineering, contributing to the next-generation technologies in this field.
📚Academic Cites and Achievements
Dr. Feng’s publications are highly cited in leading scientific journals. His work on magnetoresistance, spin-valve structures, and spin-Hall effects has been referenced over 2400 times, with significant attention in prestigious journals like Nature Communications, Science Advances, Advanced Materials, and Physical Review Letters. His h-index of 27 reflects the broad influence of his research in spintronics and related fields. Additionally, he holds more than 10 patents in China and the USA, contributing to the development of next-generation spintronic devices.
🧑🔬Research Skills
Dr. Feng possesses exceptional research skills in both theoretical and experimental aspects of spintronics. He has expertise in the design and fabrication of nano-scale devices, particularly spin-valve structures and magnetic tunnel junctions. His proficiency in material synthesis, magnetometry, and microwave measurements has led to breakthroughs in spin transport and magnetoresistance phenomena. His interdisciplinary approach allows him to collaborate across fields, combining physics, engineering, and materials science. Furthermore, Dr. Feng’s ability to translate fundamental discoveries into practical applications is a hallmark of his research.
👨🏫Teaching Experience
Dr. Feng has been a Position-Professor at the University of Chinese Academy of Sciences since 2016. He mentors graduate students, offering courses on spintronics and quantum materials. His teaching style emphasizes practical applications, fostering a deep understanding of magnetic devices and phenomena. By integrating his research insights into his lectures, Dr. Feng inspires students to pursue innovative solutions to complex scientific challenges. His commitment to education and mentorship has cultivated the next generation of materials scientists and physicists.
🏆 Awards and Honors
Dr. Feng’s achievements include his selection for the Youth Innovation Promotion Association of the Chinese Academy of Sciences in 2017, recognizing his potential as a leader in scientific innovation. He has been awarded multiple prestigious fellowships and has received grants for pioneering research projects. His patents, published in both China and the USA, underscore his contribution to applied physics. These accolades reflect his dedication to advancing spintronics and solidify his reputation as a trailblazer in his field.
🔮 Legacy and Future Contributions
Dr. Feng envisions a future where spintronic technologies revolutionize data storage and sensor systems. His ongoing work aims to enhance the performance and scalability of magnetic random access memory (MRAM) and nano-oscillators. Through his patents and publications, he continues to influence materials science and applied physics. His legacy lies in his pioneering contributions to spintronics and his dedication to mentorship and innovation, ensuring that his scientific impact endures for generations.
Publications Top Notes
Fast response of TMR magnetic sensor in high-frequency alternating magnetic fields under varying temperature conditions
- Authors: Chen, P., Feng, J., Zhang, Y., Jiang, A., Han, X.
Journal: Journal of Magnetism and Magnetic Materials
Year: 2024
Temperature dependent structural and magnetic properties of permalloy (Ni80Fe20) nanotubes
- Authors: Parajuli, S., Javed, K., Irfan, M., Feng, J.F., Han, X.F.
Journal: Journal of Magnetism and Magnetic Materials
Year: 2024
Quantum well oscillations in giant magnetoresistance and conductance with ferromagnetic free layer thickness in spin-valve structures with inverted [Co/Pt]n/Co reference layer
- Authors: Feng, J., Chen, P., Liu, S., Lu, M., Han, X.F.
Journal: Journal of Magnetism and Magnetic Materials
Year: 2024
Magnetization switching driven by spin current in a T-type ferromagnetic trilayer
- Authors: Liu, S., Wan, C., Feng, J., Samardak, A.S., Han, X.
Journal: Applied Physics Letters
Year: 2024
Electrical detection of spin pumping in van der Waals ferromagnetic Cr2Ge2Te6 with low magnetic damping
- Authors: Xu, H., Jia, K., Huang, Y., Han, X., Yu, G.
Journal: Nature Communications
Year: 2023